CY7C199集成电路（IC）的存储器规格书PDF中文资料

Functional Description

The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81 when deselected. The CY7C199 is in the standard 300-mil-wide DIP, SOJ, and LCC packages.

Features

• High speed

— 12 ns

• Fast tDOE

• CMOS for optimum speed/power

• Low active power

— 495 mW (Max, “L” version)

• Low standby power

— 0.275 mW (Max, “L” version)

• 2V data retention (“L” version only)

• Easy memory expansion with CE and OE features

• TTL-compatible inputs and outputs

• Automatic power-down when deselected

• Available in pb-free 28-pin TSOP I and 28-pin (300-Mil)

Molded DIP