CY7C197BN-12VC中文资料赛普拉斯数据手册PDF规格书

General Description [1]

The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected

Features

• Fast access time: 12 ns

• Wide voltage range: 5.0V ± 10 (4.5V to 5.5V)

• CMOS for optimum speed and power

• TTL compatible inputs and outputs

• Available in 24-lead DIP and 24-lead SOJ