512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

文件：519.659 Kbytes 页数：33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司