CY7C1380CV25中文资料赛普拉斯数据手册PDF规格书

Functional Description

The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.

特性 Features

• Fast clock speed: 250, 225, 200, 167 MHz

• Provide high-performance 3-1-1-1 access rate

• Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns

• Optimal for depth expansion

• Single 2.5V ±5 power supply

• Common data inputs and data outputs

• Byte Write Enable and Global Write control

• Chip enable for address pipeline

• Address, data, and control registers

• Internally self-timed Write cycle

• Burst control pins (interleaved or linear burst sequence)

• Automatic power-down available using ZZ mode or CE deselect

• Available in 119-ball bump BGA, 165-ball FBGA and 100-pin TQFP packages

• JTAG boundary scan for BGA packaging version