256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

文件：307.76 Kbytes 页数：27 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司