CY7C1361C-100BGC集成电路（IC）的存储器规格书PDF中文资料

CY7C1361C-100BGC属于集成电路（IC）的存储器。由赛普拉斯半导体公司制造生产的CY7C1361C-100BGC存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Functional Description[1]

The CY7C1361C/CY7C1363C is a 3.3V, 256K x 36 and 512K x 18 Synchronous Flowthrough SRAMs, respectively designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access.

特性 Features

• Supports 133-MHz bus operations

• 256K × 36/512K × 18 common I/O

• 3.3V –5 and +10 core power supply (VDD)

• 2.5V or 3.3V I/O supply (VDDQ)

• Fast clock-to-output times

— 6.5 ns (133-MHz version)

— 7.5 ns (117-MHz version)

— 8.5 ns (100-MHz version)

• Provide high-performance 2-1-1-1 access rate

• User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed write

• Asynchronous output enable

• Available in Lead-Free 100 TQFP,119 BGA and 165 fBGA packages Both 2 and 3 Chip Enable Options for TQFP

• IEEE 1149.1 compatible JTAG Boundary Scan for BGA and fBGA packages

• “ZZ” Sleep Mode option