CY7C1360C-200AXC集成电路（IC）的存储器规格书PDF中文资料

Functional Description

The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2and CE3), Burst Control inputs (ADSC, ADSP, andADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

Features

• Supports bus operation up to 250 MHz

• Available speed grades are 250, 200, and 166 MHz

• Registered inputs and outputs for pipelined operation

• 3.3V core power supply

• 2.5V/3.3V I/O operation

• Fast clock-to-output times

— 2.8 ns (for 250-MHz device)

— 3.0 ns (for 200-MHz device)

— 3.5 ns (for 166-MHz device)

• Provide high-performance 3-1-1-1 access rate

• User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed writes

• Asynchronous output enable

• Single Cycle Chip Deselect

• Offered in Lead-Free 100-pin TQFP, 119-ball BGA and 165-Ball fBGA packages

• TQFP Available with 3-Chip Enable and 2-Chip Enable

• IEEE 1149.1 JTAG-Compatible Boundary Scan

• “ZZ” Sleep Mode Option