CY7C1353B-50BGC中文资料赛普拉斯数据手册PDF规格书

Functional Description

The CY7C1353B is a 3.3V, 256K by 18 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1353B is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in sys tems that require frequent Write-Read transitions. The CY7C1353B is pin/functionally compatible to ZBT SRAMs MCM63Z819 and MT55L256L18F.

特性 Features

• Pin compatible and functionally equivalent to ZBT™ devices MCM63Z819 and MT55L256L18F

• Supports 117-MHz bus operations with zero wait states

— Data is transferred on every clock

• Internally self-timed output buffer control to eliminate the need to use OE

• Registered inputs for flow-through operation

• Byte Write capability

• 256K x 18 common I/O architecture

• Single 3.3V power supply

• Fast clock-to-output times

— 7.5 ns (for 117- MHz device)

— 8.5 ns (for 100-MHz device)

— 11.0 ns (for 66-MHz device)

— 12. 0 ns (for 50-MHz device)

— 14.0 ns (for 40-MHz device)

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed writes

• Asynchronous Output Enable

• JEDEC-standard 100 TQFP package

• Burst Capability—linear or interleaved burst order

• Low standby power