4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

文件：427.14 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

文件：427.14 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

文件：427.14 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture

Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through ope

文件：427.14 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司