CY7C1350G-200AXC集成电路（IC）的存储器规格书PDF中文资料

Functional Description[1]

The CY7C1350G is a 3.3V, 128K x 36 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1350G is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of the SRAM, especially in systems that require frequent Write/Read transitions.

Features

• Pin compatible and functionally equivalent to ZBT™ devices

• Internally self-timed output buffer control to eliminate the need to use OE

• Byte Write capability

• 128K x 36 common I/O architecture

• 3.3V power supply (VDD)

• 2.5V/3.3V I/O power supply (VDDQ)

• Fast clock-to-output times — 2.6 ns (for 250-MHz device)

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed writes

• Asynchronous output enable (OE)

• Available in lead-free 100-Pin TQFP package, lead-free and non-lead-free 119-Ball BGA package

• Burst Capability—linear or interleaved burst order

• “ZZ” Sleep mode option