CY7C1328G集成电路（IC）的存储器规格书PDF中文资料

CY7C1328G属于集成电路（IC）的存储器。由赛普拉斯半导体公司制造生产的CY7C1328G存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Functional Description[1]

The CY7C1328G SRAM integrates 256K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation.

特性 Features

• Registered inputs and outputs for pipelined operation

• Optimal for performance (Double-Cycle deselect)

— Depth expansion without wait state

• 256K × 18 common I/O architecture

• 3.3V core power supply (VDD)

• 3.3V/2.5V I/O power supply (VDDQ)

• Fast clock-to-output times

— 2.6 ns (for 250-MHz device)

• Provide high-performance 3-1-1-1 access rate

• User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed writes

• Asynchronous Output Enable

• Available in lead-free 100-Pin TQFP package

• “ZZ” Sleep Mode option