CY7C1318KV18-250BZXC集成电路（IC）的存储器规格书PDF中文资料

CY7C1318KV18-250BZXC属于集成电路（IC）的存储器。由赛普拉斯半导体公司制造生产的CY7C1318KV18-250BZXC存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Functional Description

The CY7C1316KV18, CY7C1916KV18, CY7C1318KV18, and CY7C1320KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter.

特性 Features

■ 18-Mbit density (2 M × 8, 2 M × 9, 1 M × 18, 512 K × 36)

■ 333-MHz clock for high bandwidth

■ Two-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Synchronous internally self-timed writes

■ DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to DDR-I device with 1 cycle read latency when DOFF is asserted LOW

■ 1.8 V core power supply with HSTL inputs and outputs

■ Variable drive HSTL output buffers

■ Expanded HSTL output voltage (1.4 V–VDD)

❐ Supports both 1.5 V and 1.8 V I/O supply

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase locked loop (PLL) for accurate data placement