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CY7C1311CV18

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1311CV18

18-Mbit QDR™-II SRAM 4-Word Burst Architecture

Infineon

英飞凌

CY7C1311CV18-167BZC

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1311CV18-167BZI

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1311CV18-167BZXC

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1311CV18-167BZXI

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1311CV18-200BZC

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1311CV18-200BZI

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1311CV18-200BZXC

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1311CV18-200BZXI

18-Mbit QDR??II SRAM 4-Word Burst Architecture

Functional Description The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedica

文件:695.1 Kbytes 页数:31 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

详细参数

  • 型号:

    CY7C1311CV18

  • 功能描述:

    静态随机存取存储器 2Mx8 1.8V QDR II 静态随机存取存储器

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存储容量:

    16 Mbit

  • 组织:

    1 M x 16

  • 访问时间:

    55 ns

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.2 V

  • 最大工作电流:

    22 uA

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    TSOP-48

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
Cypress
165-FBGA
6300
Cypress一级分销,原装原盒原包装!
询价
Cypress Semiconductor Corp
21+
256-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
Cypress Semiconductor Corp
24+
165-FBGA(13x15)
56200
一级代理/放心采购
询价
CYPRESS
25+
BGA-165
1001
就找我吧!--邀您体验愉快问购元件!
询价
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
询价
Cypress
22+
165FBGA (13x15)
9000
原厂渠道,现货配单
询价
Cypress Semiconductor Corp
23+
165-FBGA(13x15)
7535
正品原装货价格低
询价
Cypress Semiconductor Corp
23+
165-FBGA13x15
7300
专注配单,只做原装进口现货
询价
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
Infineon Technologies
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
询价
更多CY7C1311CV18供应商 更新时间2026-2-6 16:20:00