128K X 36 Dual I/O Dual Address Synchronous SRAM

Functional Description The CY7C1300A SRAM integrates 131,072 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two

文件：147.48 Kbytes 页数：12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K X 36 Dual I/O Dual Address Synchronous SRAM

Functional Description The CY7C1300A SRAM integrates 131,072 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two

文件：147.48 Kbytes 页数：12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K X 36 Dual I/O Dual Address Synchronous SRAM

Functional Description The CY7C1300A SRAM integrates 131,072 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two

文件：147.48 Kbytes 页数：12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K X 36 Dual I/O Dual Address Synchronous SRAM

Infineon

英飞凌