32K x 36 Dual I/O Dual Address Synchronous SRAM

Functional Description The CY7C1299A SRAM integrates 32,768 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two h

文件：142.94 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

32K x 36 Dual I/O Dual Address Synchronous SRAM

Functional Description The CY7C1299A SRAM integrates 32,768 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two h

文件：142.94 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

32K x 36 Dual I/O Dual Address Synchronous SRAM

Functional Description The CY7C1299A SRAM integrates 32,768 × 36 SRAM cells with advanced synchronous peripheral circuitry. It employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two h

文件：142.94 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

32K x 36 Dual I/O Dual Address Synchronous SRAM

Infineon

英飞凌