2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2K x 8 Static RAM

Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs • Capable of withstanding greater t

文件：217.63 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司