2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司