512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

文件：165.03 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Infineon

英飞凌

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

文件：165.03 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

文件：165.03 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

文件：165.03 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

文件：165.03 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

文件：165.03 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

文件：165.03 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

文件：165.03 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

文件：165.03 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司