512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

文件：421.76 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司