64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

文件：239.28 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

文件：239.28 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

文件：239.28 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

文件：239.28 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司