128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or CY7C1018V33

文件：252.28 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or CY7C1018V33

文件：258.2 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

• High speed\n   — tAA = 10 ns\n• CMOS for optimum speed/power\n• Center power/ground pinout\n• Automatic power-down when deselected\n• Easy memory expansion with CE and OE options\n• Functionally equivalent to CY7C1019V33 and/or CY7C1018V33;

Infineon

英飞凌

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or CY7C1018V33

文件：258.2 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or CY7C1018V33

文件：252.28 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or CY7C1018V33

文件：258.2 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or CY7C1018V33

文件：252.28 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or CY7C1018V33

文件：258.2 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or CY7C1018V33

文件：258.2 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 8 Static RAM

Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or CY7C1018V33

文件：258.2 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司