128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：339.76 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：339.76 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：339.76 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：339.76 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：339.76 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：339.76 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：339.76 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：510.64 Kbytes 页数：16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：339.76 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

文件：339.76 Kbytes 页数：11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司