128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

文件：153.93 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Infineon

英飞凌

128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

文件：153.93 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

文件：153.93 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

文件：153.93 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

文件：153.93 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司