CY7C1009V33-12VC

128K x 8 Static RAM

FunctionalDescription TheCY7C109V33/CY7C1009V33isahigh-performanceCMOSstaticRAMorganizedas131,072wordsby8bits.EasymemoryexpansionisprovidedbyanactiveLOWChipEnable(CE1),anactiveHIGHChipEnable(CE2),anactiveLOWOutputEnable(OE),andthree-statedrivers.Writin

CY7C1009V33-12VC

128K x 8 Static RAM; • High speed\n— tAA = 15, 20, 25ns\n• VCC = 3.3V ± 10%\n• Low active power\n— 432 mW (max.)\n— 288 mW (L version)\n• Low CMOS standby power\n— 18 mW (max.)\n— 7.2 mW (L version)\n• 2.0V Data Retention\n• Automatic power-down when deselected\n• TTL-compatible inputs and outputs\n• Easy memory expansion with CE1, CE2, and OE options;

Functional Description\nThe CY7C109V33/CY7C1009V33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable one (CE1) and Write Enable (WE) inputs LOW and Chip Enable two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16)