Functional Description [1]

The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65 when the devices are deselected.

Features

• Pin- and function-compatible with CY7C106B/CY7C1006B

• High speed

— tAA = 10 ns

• Low active power

— ICC = 80 mA @ 10 ns

• Low CMOS standby power

— ISB2 = 3.0 mA

• 2.0V Data Retention

• Automatic power-down when deselected

• CMOS for optimum speed/power

• TTL-compatible inputs and outputs

• CY7C106D available in Pb-free 28-pin 400-Mil wide Molded SOJ package. CY7C1006D available in Pb-free 28-pin 300-Mil wide Molded SOJ package