3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM

Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC =

文件：280.98 Kbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM

Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC =

文件：459.9 Kbytes 页数：23 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static

文件：695.25 Kbytes 页数：23 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static RAM

Features • True dual-ported memory cells that allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC =

文件：280.98 Kbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

3.3V 16K/32K x 36 FLEx36??Asynchronous Dual-Port Static

文件：695.25 Kbytes 页数：23 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM

Features • True dual-ported memory cells which allow simultaneous access of the same memory location • 16K x 36 organization (CY7C056V) • 32K x 36 organization (CY7C057V) • 0.25-micron CMOS for optimum speed/power • High-speed access: 12/15/20 ns • Low operating power — Active: ICC =

文件：459.9 Kbytes 页数：23 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司