CY62136V数据手册集成电路（IC）的存储器规格书PDF

描述 Description

Functional Description[1]
The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O 15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

特性 Features

• High speed
   — 55 ns
• Temperature Ranges
   — Industrial: –40°C to 85°C
   — Automotive: –40°C to 125°C
• Wide voltage range
   — 2.7V – 3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in a Pb-free and non Pb-free 44-pin TSOP
   Type II (forward pinout) and 48-ball FBGA packages