2M (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

文件：213.57 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

文件：213.57 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

文件：213.57 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

文件：213.57 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

文件：213.57 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司