1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

文件：914.1 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128 K x 8) Serial SPI nvSRAM Infinite read, write, and RECALL cycles

文件：1.18287 Mbytes 页数：26 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K x 8) Serial SPI nvSRAM

文件：1.36336 Mbytes 页数：27 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K × 8) Serial SPI nvSRAM

Functional Overview\nThe Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creati ■ 1-Mbit nonvolatile static random access memory (nvSRAM)\n  ❐ Internally organized as 128 K × 8\n  ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using HSB pin (Hardware STORE) or SPI instruction (Software STORE)\n  ❐ RECALL to SRAM initiate;

Infineon

英飞凌

1-Mbit (128 K x 8) Serial (SPI) nvSRAM Data retention: 20 years at 85 째C

Functional Overview The Cypress CY14X101Q combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most

文件：1.09598 Mbytes 页数：34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K x 8) Serial (SPI) nvSRAM Data retention: 20 years at 85 째C

Functional Overview The Cypress CY14X101Q combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most

文件：1.09598 Mbytes 页数：34 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司