131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

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131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

索尼

131,072-word X 9-bit High Speed CMOS Static RAM

Description The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed. The CXK591000T

文件：271.75 Kbytes 页数：13 Pages

SonySony Corporation

索尼