CXK58512TM-10LL中文资料索尼数据手册PDF规格书

描述 Description

The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption, high speed.

The CXK58512TM/M is a suitable RAM for portable equipment with battery back up.

特性 Features

• Fast access time (Access time)

-55LL 55ns (Max.)

-70LL 70ns (Max.)

-10LL 100ns (Max.)

• Low standby current 10µA (Max.)

• Low data retention current 6µA (Max.)

• Single +5V supply: +5V ± 10

• Low voltage data retention: 2.0V (Min.)

• Broad package line-up

CXK58512TM 8mm × 20mm 32 pin TSOP package

CXK58512M 525mil 32 pin SOP Package

Function

65536-word × 8 bit static RAM