射频放大器 50-1000MHz NF 1.5dB Gain 20dB P1dB 23dBm

Qorvo

威讯联合

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz

文件：23.05 Kbytes 页数：2 Pages

SEME-LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz

文件：23.05 Kbytes 页数：2 Pages

SEME-LAB

50 - 850 MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier

文件：736.88 Kbytes 页数：6 Pages

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