N-Channel Enhancement-Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件：254.82 Kbytes 页数：8 Pages

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N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：388.24 Kbytes 页数：16 Pages

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RF Power GaN Transistor

文件：346.8 Kbytes 页数：9 Pages

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RF Power LDMOS Transistor

文件：255.19 Kbytes 页数：8 Pages

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