EMH2407

N-ChannelPowerMOSFET

Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Protectiondiodein

EMH2407R

General-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1:16mΩ(typ.) •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Halogenfreecompliance

EMH2407-TL-H

N-ChannelPowerMOSFET

Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Protectiondiodein

FDSS2407

N-ChannelDualMOSFET

H2407XES

Isolated2WSingleOutputDC/DCConverters

IIRFR2407

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤26mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IK2407SA

0.25WattIKSeries

IRFR/U2407

HEXFETPowerMOSFET

IRFR2407

PowerMOSFET(Vdss=75V,Rds(on)=0.026ohm,Id=42A??

Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRFR2407

AdvancedProcessTechnology