首页 >CUHS20S30,H3F(T>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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FastRecoveryEpitaxialDiode | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
FastRecoveryEpitaxialDiode | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
20.0AmpereSurfaceMountDualSeriesConnectionUltraFastRecoveryRectifiers Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
SCHOTTKYBARRIERRECTIFIERS(20A,30-60V) TheD2PAKPowerrectifieremploystheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artdeviceshavethefollowingfeatures: *LowForwardVoltage. *LowSwitchingnoise. *HighCurrentCapacity *GuaranteeReverseAvalanche. *Guard-RingforStressProtection | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SchottkyBarrierRectifiers SCHOTTKYBARRIERRECTIFIERS 20AMPERES35-60VOLTS TheI2PAKPowerrectifieremploystheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artdeviceshavethefollowingfeatures: *LowForwardVoltage. *LowSwitchingnoise. *HighCurrentCapacity | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE30-45VoltsCURRENT20Amperes FEATURES *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 *MetalSiliconjunction,majoritycarrierconduction *Lowpowerloss,highefficiency *Highcurrentcapability,lowforwardvoltagedrop | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
SiliconCarbideSchottkyDiode SiliconCarbideSchottkyDiode •Revolutionarysemiconductormaterial-SiliconCarbide •Switchingbehaviorbenchmark •Noreverserecovery •Notemperatureinfluenceontheswitchingbehavior •Noforwardrecovery | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconCarbideSchottkyDiodeSwitchingbehaviorbenchmarkNoreverserecovery | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconCarbideSchottkyDiodeSwitchingbehaviorbenchmark | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconCarbideSchottkyDiode SiliconCarbideSchottkyDiode •Revolutionarysemiconductormaterial-SiliconCarbide •Switchingbehaviorbenchmark •Noreverserecovery •Notemperatureinfluenceontheswitchingbehavior •Noforwardrecovery | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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