TO-252 : N channel

The CTH2303NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. • Drain-Source Breakdown Voltage VDSS 30V\n• Continuous Drain Current at TC=25℃ID =23A\n• RoHS Compliance & Halogen Free\n• ESD Protection;

CT-Micro

微兆龙

N-Channel Enhancement MOSFET

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CTMICRO

ZLG

致远电子

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DIP-7

ZLG

致远电子

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DIP

周立功

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