CTDN1415V-G

300 Watt Transient Voltage Suppressor

CTEN1415V-G

300WattTransientVoltageSuppressor

D1415

SiliconNPNPowerTransistors

D1415A

High-PowerSwitchingApplications

D1415A

NPNTRIPLEDIFFUSEDTYPE(HIGHPOWERSWITCHING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A)

D1415A

SiliconNPNPowerTransistors

D1415A

TOSHIBATransistorSiliconNPNTripleDiffusedType(Darlington)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A)

F1415

PATENTEDGOLDMETALIZEDSILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet™processfeaturesgoldmetalforgreatlyextendedlifetim

HFBR-1415C

ComponentsisDesignedtoProvidecosteffective,Highperformancefiberopticcommunicationlinks

Description TheHFBR-0400Seriesofcomponentsisdesignedtoprovidecosteffective,highperformancefiberopticcommunicationlinksforinformationsystemsandindustrialapplicationswithlinkdistancesofupto4kilometers.WiththeHFBR-24X6,the125MHzanalogreceiver,dataratesofupt

HFBR-1415CZ

Low-Cost,820nmMiniatureLinkFiberOpticComponentswithST,SMA,SC,andFCPorts

Features RoHScompliant Low-costtransmittersandreceivers ChoiceofST,SMA,SC,orFCports 820nmwavelengthtechnology Signalratesupto160MBaud Linkdistancesuptoseveralkilometers Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica(