MAXIMUM RATINGS, ELECTRICAL SPECIFICATIONS

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COTO

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS =

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FAIRCHILD

仙童半导体

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts Minimum Gain = 9.0 dB • Built–In Matching Network for Broadb

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MOTOROLA

摩托罗拉

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Silicon P–Channel JFET Transistor General Purpose AF Amplifi

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NTE