CSPT857D

2.5V - 2.6V PHASE LOCKED LOOP DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER

FEATURES: •1to10differentialclockdistribution •OptimizedforclockdistributioninDDR(DoubleDataRate) SDRAMapplicationsrequiringimprovedoutputcrosspoint voltage •Operatingfrequency:60MHzto220MHz •Verylowskew: –

CSPT857DBVG8

Package：56-TFBGA；包装：托盘 类别：集成电路（IC） 应用特定时钟/定时 描述：IC CLK BUF DDR 220MHZ 1CIRC

Renesas Electronics America Inc

CSPT857DPAG

Package：48-TFSOP（0.240"，6.10mm 宽）；包装：托盘 类别：集成电路（IC） 应用特定时钟/定时 描述：IC CLK BUF DDR 220MHZ 1CIRC

Renesas Electronics America Inc

CSPT857DPAG8

Package：48-TFSOP（0.240"，6.10mm 宽）；包装：托盘 类别：集成电路（IC） 应用特定时钟/定时 描述：IC CLK BUF DDR 220MHZ 1CIRC

Renesas Electronics America Inc

CX857

CX857IC

DSE857

USBTORS485COMMUNICATIONSDEVICE

KEYFEATURES •SupportsawiderangeofDSEcontrollers. •ConvertssupportedDSEcontroller’sUSB porttoanRS485port. •SimpleconfigurationofDSE857viatheDSE ConfigurationSuitePCSoftware •Remotecontrolandmonitoringofthe connectedsupportedDSEcontrollerviathe DSEConfi

DST857BDJ

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdeallySuitedforAutomatedAssemblyProcesses •ComplementaryNPNTypeAvailable(DST847BDJ) •UltraSmallPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)

FMB857B

PNPEpitaxialSiliconTransistor

FMB857B

256MbF-dieDDRSDRAMSpecification

FZT857

NPNSILICONPLANARHIGHCURRENT(HIGHPERFORMANCE)TRANSISTOR

FEATURES *Upto3.5Ampscontinuouscollectorcurrent,upto5Amppeak *VCEO=300V *Verylowsaturationvoltage *Excellenthspecifiedupto3Amps