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首页>CSD85301Q2>详情
CSD85301Q2_TI/德州仪器_20V Dual N-Channel NexFET Power MOSFETs华来深电子
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产品属性
- 类型
描述
- 型号
:CSD85301Q2
- Configuration
:Dual
- Rds(on) max at VGS=4.5 V (mOhms)
:27
- IDM - pulsed drain current (Max) (A)
:26
- QG typ (nC)
:4.2
- QGD typ (nC)
:1
- Package (mm)
:SON2x2
- VGS (V)
:10
- VGSTH typ (V)
:0.9
- ID - silicon limited at Tc=25degC (A)
:5
- ID - package limited (A)
:5
- Logic level
:Yes
供应商
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