CSD75208W1015.B中文资料德州仪器数据手册PDF规格书

1 Features

1• Dual P-Channel MOSFETs

• Common Source Configuration

• Small Footprint 1 mm × 1.5 mm

• Gate-Source Voltage Clamp

• Gate ESD Protection –3 kV

• Pb Free

• RoHS Compliant

• Halogen Free

2 Applications

• Battery Management

• Load Switch

• Battery Protection

3 Description

This device is designed to deliver the lowest onresistance

and gate charge in the smallest outline

possible with excellent thermal characteristics in an

ultra-low profile. Low on-resistance coupled with the

small footprint and low profile make the device ideal

for battery operated space constrained applications.