丝印：CSD18511KTT；Package：TO-263；CSD18511KTT 40-V N-Channel NexFET™ Power MOSFET

1 Features 1• Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, D2PAK (

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德州仪器

40-V N-Channel NexFET Power MOSFET

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德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

CSD18511KCS 40V N-Channel NexFET™ Power MOSFET

1 Features • Low Qg and Qgd • Low RDS(ON) • Low-thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 40V, 2.1mΩ, TO-220 Ne

文件：864.68 Kbytes 页数：13 Pages

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德州仪器