CSD16340Q3T.B中文资料德州仪器数据手册PDF规格书

1 Features

1• Optimized for 5 V Gate Drive

• Resistance Rated at VGS =2.5 V

• Ultra-Low Qg and Qgd

• Low Thermal Resistance

• Avalanche Rated

• Pb Free Terminal Plating

• RoHS Compliant

• Halogen Free

• SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

• Point of Load Synchronous Buck Converter for

Applications in Networking, Telecom, and

Computing Systems

• Optimized for Control or Synchronous FET

Applications

3 Description

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in

power conversion and optimized for 5 V gate drive

applications.