CSD13385F5T中文资料德州仪器数据手册PDF规格书

1 Features

• Low on resistance

• Low Qg and Qgd

• Ultra-small footprint

– 1.53 mm × 0.77 mm

• Low profile

– 0.36-mm height

• Integrated ESD protection diode

– Rated > 4-kV HBM

– Rated > 2-kV CDM

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for industrial load switch applications

• Optimized for general purpose switching

applications

3 Description

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET

technology is designed and optimized to minimize the

footprint in many handheld and mobile applications.

This technology is capable of replacing standard

small signal MOSFETs while providing a significant

reduction in footprint size.