CSC2323-S

6-Ch Audio Selector

FEATURES -SupplyVoltage:9V -4StereoInputs -One6-ChannelInput -MaximumInputVoltage:3.75Vrms(1kHz,THD

2323-P

NylonHoseClamps

2323-RC

HighCurrentToroidInductorsHorizontalorverticalmount

2323-RC

HighCurrentToroidInductors

2323-RC

HighCurrentToroidInductors

2323-RC

HighCurrentToroidInductors

2323-RC

HighCurrentToroidInductors

A2323

AUDIOAMPLIFIER2.65WCLASS-DAUDIOPOWERAMPLIFIER

DESCRIPTION TheA2323isTDDsuppression,superlowEMI,singlechannel,class-Daudiopoweramplifier. TheA2323designedwiththededicatedEEE(EnhancedEmissionElimination)technology,reducinggreatEMIjamminginfullfrequencyspanrange,relativeto60cmaudiocable,withmorethan20dB

ADP2323

Dual3A,20VSynchronousStep-DownRegulatorwithIntegratedHigh-SideMOSFET

ADP2323

Dual3A,20VSynchronousStep-DownRegulatorwithIntegratedHigh-SideMOSFET

GENERALDESCRIPTION TheADP2323isafullfeatured,dualoutput,step-downdc-to-dcregulatorbasedoncurrent-modearchitecture.TheADP2323integratestwohigh-sidepowerMOSFETsandtwolow-sidedriversfortheexternalN-channelMOSFETs.Thetwopulse-widthmodulation(PWM)channelscanbec

ADP2323-EVALZ

Dual3A,20VSynchronousStep-DownRegulatorwithIntegratedHigh-SideMOSFET

ADP2323-EVALZ

Dual3A,20VSynchronousStep-DownRegulatorwithIntegratedHigh-SideMOSFET

GENERALDESCRIPTION TheADP2323isafullfeatured,dualoutput,step-downdc-to-dcregulatorbasedoncurrent-modearchitecture.TheADP2323integratestwohigh-sidepowerMOSFETsandtwolow-sidedriversfortheexternalN-channelMOSFETs.Thetwopulse-widthmodulation(PWM)channelscanbec

AIC2323

3.2A550k/1.1MHzSynchronousPWM

AM2323P

P-Channel20-V(D-S)MOSFET

AP2323GN-HF

Capableof1.8VGateDrive,SmallPackageOutline

APM2323A

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.5A, RDS(ON)=130mΩ(typ.)@VGS=-4.5V RDS(ON)=170mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM2323AAC-TRL

P-Channel20-V(D-S)MOSFET

APM2323AC-TR

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.5A, RDS(ON)=130mΩ(typ.)@VGS=-4.5V RDS(ON)=170mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM2323AC-TRL

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.5A, RDS(ON)=130mΩ(typ.)@VGS=-4.5V RDS(ON)=170mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

CES2323

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4.1A,RDS(ON)=48mΩ@VGS=-10V. RDS(ON)=80mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.