NX5501EK

LASERDIODE

1550nmFORFTTH InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5501Seriesisa1550nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD. APPLICATION •FTTH(FiberToTheHome) FEATURES •OpticaloutputpowerPo=5.0mW •Lowthresholdcur

NX5501EK-AZ

NECs1550nmInGaAsPMQW-FPLASERDIODEINCANPACKAGEFORFTTHAPPLICATION

OLH5501

HermeticHigh-SpeedOptocouplers

Features Rugged,reliablehermeticDualInlinePackage(DIP) Performanceguaranteedoverfullmilitarytemperaturerange Highisolationvoltage,3000VDC High-speed,400Kbpstypical Opencollectoroutput Highcommonmodetransientimmunity>10,000V/μsat VCM=350V Radiati

PE5501-KIT

TypeN,18GHzVNACalibrationKit

PMP5501G

LowVCEsat(BISS)transistors

PMP5501G

NPN/NPNmatcheddoubletransistors

Features *Currentgainmatching *Base-emittervoltagematching *CommonemitterconfigurationforSOT353types *Application-optimizedpinout

PMP5501G

PNP/PNPmatcheddoubletransistors

Features *Currentgainmatching *Base-emittervoltagematching *CommonemitterconfigurationforSOT353types *Application-optimizedpinout

PMP5501QAS

45V,100mAPNP/PNPmatcheddoubletransistors

1.Generaldescription PNP/PNPmatcheddoubletransistorsinanultrasmallDFN1010B-6(SOT1216)leadlessSurface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PMP4501QAS 2.Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0

PMP5501V

45V,100mAPNP/PNPmatcheddoubletransistor

1.Generaldescription PNP/PNPmatcheddoubletransistorinanultrasmallSurface-MountedDevice(SMD)plastic package.ThetransistorsintheSOT666packagearefullyisolatedinternally. PNP/PNPhFE1/hFE20.98complement:PMP5201V NPN/NPNcomplement:PMP4501V 2.Featuresandbenefits •