平面MOSFET

Convert

锴威特

450mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 450mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

文件：2.55099 Mbytes 页数：15 Pages

DINTEK

尚鼎芯

450mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 450mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

文件：2.55099 Mbytes 页数：15 Pages

DINTEK

尚鼎芯

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.1 mA)

文件：241.14 Kbytes 页数：10 Pages

TOSHIBA

东芝