CRCW1K00FKEA中文资料恩XP数据手册PDF规格书

RF LDMOS Wideband Integrated Power Amplifier

The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

Final Application

• Typical Two--Tone Performance: VDD = 28 Volts, IDQ1 = 120 mA, IDQ2 =

90 mA, Pout = 5 Watts Avg., Full Frequency Band (1805--1880 MHz or

1930--1990 MHz)

Power Gain — 29 dB

Power Added Efficiency — 29

IMD — --34 dBc

Driver Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 105 mA, IDQ2 =

95 mA, Pout = 35 dBm, Full Frequency Band (1805--1880 MHz or

1930--1990 MHz)

Power Gain — 29 dB

Spectral Regrowth @ 400 kHz Offset = --67 dBc

Spectral Regrowth @ 600 kHz Offset = --76 dBc

EVM — 1.1 rms

• Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW Output Power

• Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 W CW Pout.

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Parameters

• On--Chip Matching (50 Ohm Input, >5 Ohm Output)

• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

• On--Chip Current Mirror gm Reference FET for Self Biasing Application (1)

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R2 Suffix = 1500 Units, 16 mm Tape Width, 13 inch Reel.