RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

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恩XP

Standard Thick Film Chip Resistors

Stability at different environmental conditions ΔR/R ≤ 1 % (1000 h rated power at 70 °C)\n2 mm pitch packaging option for 0603 size\nAEC-Q200 qualified;

Vishay

威世

Package：1206（3216 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 2.7 OHM 1% 1/4W 1206

Vishay Dale

Package：1206（3216 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 2.7 OHM 1% 1/4W 1206

Vishay Dale

Pulse Proof, High Power Thick Film Chip Resistors

Excellent pulse load capability\nEnhanced power rating\nDouble side printed resistor element;

Vishay

威世

Package：1206（3216 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES 2.7 OHM 1% 1/4W 1206

Vishay Dale