1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications

文件：761.3 Kbytes 页数：18 Pages

恩XP

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features  Designed for Wide Instantaneous Bandwidt

文件：468.68 Kbytes 页数：15 Pages

恩XP

Package：1206（3216 公制）；包装：卷带（TR） 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 2.37 OHM 1% 1/4W 1206

Vishay Dale

2010SMD

VishayVishay Siliconix

威世威世科技公司

上传：深圳市金柏一科技有限公司

SOP8

CRESEMI/康源

上传：深圳市粤华信科技有限公司